We are proud to announce that our latest publication with the title “Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode” has been accepted for publication in the Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
Abstract:
For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy ϵi published in the literature vary significantly. This work presents an experimental determination of ϵi using 50 μm 4H-SiC p-n diodes designed for particle detection in high-energy physics. The detector response was measured for α particles between 4.2 MeV and 5.6 MeV for 4H-SiC and a silicon reference device. Different α energies were obtained by using multiple nuclides and varying the effective air gap between the α source and the detector. The energy deposited in the detectors was determined using a Monte Carlo simulation, taking into account the device cross-sections. A linear fit of the detector response to the deposited energy yields ϵi = (7.83 ± 0.02) eV, which agrees well with the most recent literature. For the 4H-SiC detectors, a linewidth of 28 keV FWHM was achieved, corresponding to an energy resolution of 0.5 %.
2024
Measurement of the electron–hole pair creation energy in a 4H-SiC p-n diode Journal Article Open Access
In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, pp. 169412, 2024, ISSN: 0168-9002.